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| Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 600 600 400 7 10 5 1 40 2 150 -55 to +150 Unit V V V V A A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 14.00.5 Solder Dip 0.5 +0.2 -0.1 0.80.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 600V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 1.5A IC = 1.5A, IB = 0.3A IC = 1.5A, IB = 0.3A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 2A, IB1 = 0.4A, IB2 = - 0.8A, VCC = 150V 30 2.0 0.3 10 8 1 2 V V MHz s s min typ max 100 100 60 Unit A A 1 Power Transistors PC -- Ta 50 2SC5393 Area of safe operation (ASO) 100 Collector power dissipation PC (W) Collector current IC (A) 40 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink 10 ICP IC 10ms t=500s 1ms 30 1 1s 20 0.1 10 (2) (3) (4) 0.01 0 0 20 40 60 80 100 120 140 160 0.001 1 3 10 30 100 300 1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 2 |
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